Data Sheet
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? 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB225T-40
?Applications
?Dimensions(Unit : mm)
??Structure
Switching power supply
?Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
?Construction
Silicon epitaxial planer
?Absolute maximum ratings(Ta=25?C)
Parameter LimitsSymbol Unit
Reverse voltage (repetitive) 40VRM
V
Reverse voltage (DC) 40VR
V
Average rectified forward current(*1) 30Io A
IFSM
A
Junction temperature 150Tj
?C
Tstg
?C
?Electrical characteristics(Ta=25?C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage
VF
- - 0.63 V
IF=15A
IR
- - 500
μA
VR=40V
Thermal impedance
θjc - - (1.75)
?C/W
junction to case
( ) : tentative
Storage temperature
?40 to ?150
(*1)Tc=105?Cmax Per chip:Io/2
Forward current surge peak (60Hz?1cyc)(*1)
100
Parameter
Reverse current
ROHM : TO220FN
Manufacture Date
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